Features

• High-accuracy voltage detection circuit for each cell
  Overcharge detection voltage n (n = 1 to 5)
   3.60 V to 4.70 V (in 50 mV steps)
   Accuracy : ±25 mV (+25°C)
   Accuracy : ±30 mV (−5°C to +55°C)
  Overcharge hysteresis voltage n (n = 1 to 5)
   0.0 mV to −550 mV (in 50 mV steps)
   −300 mV to −550 mV Accuracy : ±20%
   −100 mV to −250 mV Accuracy : ±50 mV
   0.0 mV to−50 mV  Accuracy : ±25 mV
• Delay times for overcharge detection can be set by an internal circuit only (external capacitors are unnecessary)
• Output form is selectable : CMOS output, Nch open-drain output, Pch open-drain output
• Output logic is selectable : Active "H", Active "L"
• High withstand voltage devices : Absolute maximum rating : 28 V
• Wide operating voltage range : 3.6 V to 26 V
• Wide operating temperature range : −40°C to +85°C
• Low current consumption
   At Vcun − 1.0 V for each cell : 3.0 µA max. (+25°C)
   At 2.3 V for each cell : 1.7 µA max. (+25°C)
• Lead-free, Sn 100%, halogen-free (Refer to "Product Name Structure" for details.)
• Packages : SNT-8A, TMSOP-8

Applications

Lithium-ion rechargeable battery packs (for secondary protection)